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| WTE POWER SEMICONDUCTORS SB820 - SB8100 8.0A SCHOTTKY BARRIER RECTIFIER Features ! ! ! ! ! ! Schottky Barrier Chip Guard Ring for Transient Protection High Current Capability, Low Forward C Low Reverse Leakage Current High Surge Current Capability G Plastic Material has UL Flammability Classification 94V-O D F P I L H B TO-220A Dim Min Max A 14.9 15.1 B -- 10.5 C 2.62 2.87 D 3.56 4.06 E 13.46 14.22 F 0.68 0.94 G 3.74 O 3.91 O H 5.84 6.86 I 4.44 4.70 J 2.54 2.79 K 0.35 0.64 L 1.14 1.40 P 4.95 5.20 All Dimensions in mm A PIN1 2 Mechanical Data ! ! ! ! ! ! Case: TO-220A Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Weight: 2.24 grams (approx.) Mounting Position: Any Marking: Type Number E PIN 1 + + Case J K PIN 2 - Maximum Ratings and Electrical Characteristics Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TC = 95C Symbol VRRM VRWM VR VR(RMS) IO @TA=25C unless otherwise specified SB820 SB830 SB840 20 14 30 21 40 28 SB850 SB860 50 35 8.0 60 42 SB880 SB8100 Unit 80 56 100 70 V V A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance (Note 1) Typical Thermal Resistance Junction to Case (Note 2) Operating and Storage Temperature Range @IF = 8.0A @TA = 25C @TA = 100C IFSM VFM IRM Cj RJC Tj, TSTG 0.55 150 0.75 0.5 50 700 6.9 -65 to +150 0.85 A V mA pF K/W C Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. 2. Thermal resistance junction to case mounted on heatsink. SB820 - SB8100 1 of 3 (c) 2002 Won-Top Electronics 10 40 8 IF, NSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE OUTPUT CURRENT (A) SB820 - SB840 20 6 SB850 - SB860 SB880 - SB8100 4 10 2 Single Pulse Half-Wave 60 Hz Resistive or Inductive Load Tj = 25C Pulse Width = 300 s 2% Duty Cycle 0 10 40 60 80 100 120 140150 0.1 0 0.5 1.0 1.5 2.0 2.5 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics TL, LEAD TEMPERATURE (C) Fig. 1 Forward Current Derating Curve 150 2000 Tj = 25C f = 1MHz IFSM , PEAK FORWARD SURGE CURRENT (A) 120 Cj, CAPACITANCE (pF) 8.3ms Single Half Sine-Wave JEDEC Method 90 1000 60 30 100 0 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Peak Fwd Surge Current 0.1 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance SB820 - SB8100 2 of 3 (c) 2002 Won-Top Electronics |
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